Prof. Michael S. Fuhrer

Michael S. Fuhrer

Professor in Physics

BS 1990 University of Texas
PhD 1998 University of California at Berkeley
Fellow APS
ARC Laureate Fellow
Phone +61 (3) 9905 1353
Fax +61 (3) 9905 3637

Email:Michael.Fuhrer@monash.edu

RESEARCH INTERESTS

Prof. Fuhrer's research explores novel two-dimensional materials such as graphene, the two-dimensional surface state of three-dimensional topological insulators (e.g. Bi2Se3), and other two dimensional semiconductors, metals, and superconductors.

Selected publications

“Dual-gated bilayer graphene hot electron bolometer,” J. Yan, M.-H. Kim, J.A. Elle, A.B. Sushkov, G.S. Jenkins, H.M. Milchberg, M.S. Fuhrer, and H.D. Drew, Nature Nanotechnology 7, 472 (2012).
http://dx.doi.org/10.1038/nnano.2012.88

“Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3,” Dohun Kim, Sungjae Cho, Nicholas P. Butch, Paul Syers, Kevin Kirshenbaum, Shaffique Adam, Johnpierre Paglione, Michael S. Fuhrer, Nature Physics 8, 460 (2012).
http://dx.doi.org/10.1038/nphys2286

“Tunable Kondo Effect in Graphene with Defects,” Jian-Hao Chen, Liang Li, W. G. Cullen, E. D. Williams, and M. S. Fuhrer, Nature Physics 7, 535 (2011).
http://dx.doi.org/10.1038/nphys1962

Jian-Hao Chen, W. G. Cullen, C. Jang, M. S. Fuhrer, E. D. Williams, “Defect scattering in graphene,” Physical Review Letters 102, 236805 (2009).
http://dx.doi.org/10.1103/PhysRevLett.102.236805

C. Jang, S. Adam, J.-H. Chen, E. D. Williams, S. Das Sarma, M. S. Fuhrer, “Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering,” Physical Review Letters 101, 146805 (2008).
http://dx.doi.org/10.1103/PhysRevLett.101.146805

J. H. Chen, C. Jang, S. Xiao, M. Ishigami, M. S. Fuhrer, “Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2,” Nature Nanotechnology 3, 206 - 209 (2008).
http://dx.doi.org/10.1038/nnano.2008.58

J. H. Chen, C. Jang, S. Adam, M. S. Fuhrer, E. D. Williams, and M. Ishigami, “Charged Impurity Scattering in Graphene,” Nature Physics 4, 377 (2008).
http://dx.doi.org/10.1038/nphys935

Masa Ishigami, J. H. Chen, W. G. Cullen, M. S. Fuhrer, and E. D. Williams, “Atomic Structure of Graphene on SiO2,” Nano Letters 7, 1643 (2007).
http://dx.doi.org/10.1021/nl070613a

Stephanie A. Getty, Chaiwat Engtrakul, Lixin Wang, Rui Liu, San-Huang Ke, Harold U. Baranger, Weitao Yang, Michael. S. Fuhrer, Lawrence R. Sita, “Near-perfect conduction through a ferrocene-based molecular wire,” Physical Review B Rapid Communications 71, 241401 (2005).
http://dx.doi.org/10.1103/PhysRevB.71.241401

T. Durkop, S. A. Getty, E. Cobas, M. S. Fuhrer, “Extraordinary Mobility in Semiconducting Carbon Nanotubes”, Nano Letters 4, 35-39 (2004).
http://dx.doi.org/10.1021/nl034841q

M. S. Fuhrer, B. M. Kim, T. Drkop, and T. Brintlinger, “High-Mobility Nanotube Transistor Memory”, Nano Letters 2, 755-759 (2002).
http://dx.doi.org/10.1021/nl025577o

P. L. McEuen, M. S. Fuhrer, H. Park, “Single-Walled Carbon Nanotube Electronics”, IEEE Transactions on Nanotechnology 1, 78-85 (2002).
http://dx.doi.org/10.1109/TNANO.2002.1005429

M. S. Fuhrer, J. Nygrd, L. Shih, M. Forero, Young-Gui Yoon, M. S. C. Mazzoni, Hyoung, Joon Choi, Jisoon Ihm, Steven G. Louie, A. Zettl and Paul L. McEuen, “Crossed nanotube junctions”, Science 288, 494-497 (2000).
http://dx.doi.org/10.1126/science.288.5465.494

A complete list of publications is available on Google Scholar
(http://scholar.google.com/citations?user=ZGW8T3wAAAAJ&hl=en)